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GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Silicon IGBT Ignition Coil Driver
REJ03G1249-0300 Rev.3.00 Jun 01, 2009
Features
* Including Clamping Zener VCL = 400 V(typ) * Low saturation Voltage VCE(sat) = 1.4 V(typ) * SMD package LDPAK
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
4 C
1 1 2
2
G 3
1. Gate 2. Collector 3. Emitter 4. Collector
3 E
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to emitter voltage Gate to Emitter voltage Emitter to Collector voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Notes: 1. Value at Tc = 25C Symbol VCES VGES VECS IC iC(peak) PCNote1 Tj Tstg Ratings 370 20 24 14 18 60 150 -55 to +150 Unit V V V A A W C C
REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Page 1 of 7
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Electrical Characteristics
(Ta = 25C)
Item Collector to Emitter breakdown voltage Gate to Emitter breakdown voltage Collector cutoff current Gate cutoff current Collector to emitter saturation voltage Collector to emitter saturation voltage Gate to emitter cutoff voltage Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reveres transfer capacitance Secondary breakdown energy Symbol V(BR)CES V(BR)GES ICES IGES VCE(sat)1 VCE(sat)2 VGE(off) td(on) tr td (off) tf Ciss Coss Cres Es/b Min 370 20 -- -- -- -- 1.3 -- -- -- -- -- -- -- 230 Typ 400 -- -- -- 1.4 1.6 -- 0.2 0.4 1.0 5 1110 75 18 -- Max 430 -- 100 100 1.7 2.2 2.2 -- -- -- -- -- -- -- -- Unit V V A A V V V s s s s pF pF pF mJ Test Conditions Ic = 2 mA, VGE = 0 V IG = 100 A, VCE = 0 V VCE = 300 V, VGE = 0 V VGE = 20 V, VCE = 0 V IC = 8 A, VGE = 10 V IC = 8 A, VGE = 4 V IC = 1 mA, VCE = 10 V VCE = 300 V, RL = 50 , VGE = 5 V, RG = 200
VCE = 10 V, VGE = 0, f = 1 MHz L = 5 mH
REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Page 2 of 7
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Main Characteristics
Power vs. Temperature Derating
80 100
Maximum Safe Operation Area
Pc (W)
IC (A)
60
10
DC
PW
Collector Dissipation
Op
=
Collector Current
er
10
ati
m
on
s(
1m
10 s 10 0 s
40
1
(T
1s
s
c=
ho
t)
25
C )
20
0.1
Ta = 25C 0 0 0.01 50 100 150 200 1 3 10 30 100 300 1000
Case Temperature
Tc (C)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Breakdown Voltage vs. Case Temperature
Collector to Emitter Breakdown Voltage V(BR)CES (V)
500 10
Typical Output Characteristics
10 V 15 V 8 6V 4V Pulse Test
450
IC (A) Collector Current
6
400
4
350 IC = 2 mA 0 50 100 150
2 0 0 2 4
VGE = 2 V 6 8 10
300 -50
Case Temperature
Tc (C)
Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage
Collector to Emitter Saturation Voltage VCE(sat) (V)
5 Pulse Test 4
Typical Transfer Characteristics
20 VCE = 10 V Pulse Test 16
IC
12
(A)
Collector Current
3 IC = 10 A
8 Tc = 125C 25C -40C 0 0 1 2 3 4 5
2
4
1 0
8A
6A
0
4
8
12
16
20
Gate to Emitter Voltage
VGE (V)
Gate to Emitter Voltage
VGE (V)
REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Page 3 of 7
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Collector to Emitter Saturation Voltage vs. Collector Current
Collector to Emitter Saturation Voltage VCE(sat) (V)
10 5 10000 3000
Typical Capacitance vs. Collector to Emitter Voltage
Capacitance C (pF)
Cies 1000 300 100 30 Cres 10 3 1 VGE = 0 f = 1 MHz 0 10 20 30 40 50 Coes
2 1 0.5
-40C
25C
Tc = 125C
0.2 0.1 0.1
VGE = 10 V Pulse Test 0.3 1 3 10 30 100
Collector Current
IC
(A)
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics
VCE (V) VGE (V)
50 IC = 10 A Ta = 25C VCE = 16 V 20 VGE 10 3 1 0.3 0.1
Switching Characteristics
tf
40
16
Collector to Emitter Voltage
Switching Time t (s)
30
12
Gate to Emitter Voltage
td(off) tr
20
8
10 VCE 0 20 40 60 80
td(on) 0.03 0.01 0.1 VCC = 300 V, VGE = 10 V Rg = 200 , Ta = 25C 0.2 0.5 1 2 5 10
4
0
0 100
Gate Charge
Qg (nc)
Collector Current
IC (A)
100 50 20 10 5 2 VCC = 16 V 1 0.1
VGE = 10 V, Rg = 200 Tc = 140C 25C
Secondary breakdown energy Es/b (mJ)
Secondary Breakdown Current vs. Inductance Ratio
ISC (A)
Secondary Breakdown Energy vs. Case Temperature
1000 500 200 100 50 20 10 25
VCC = 16 V, L = 5 mH VGE = 10 V, Rg = 200
Secondary breakdown Current
0.2
0.5
1
2
5
10
50
75
100
125
Inductance Ratio L (mH)
Case Temperature Tc (C)
REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Page 4 of 7
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance s (t)
Tc = 25C 1 D=1 0.5 0.2 0.1 0.1
0.05
0.3
0.03
0.02
0.01
0.05
1s
t ho
pu
lse
ch - c(t) = s (t) * ch - c ch - c = 2.08C/W, Tc = 25C PDM PW T 100 1m 10 m 100 m 1 10 D= PW T
0.003 0.001 10
Pulse Width
PW (S)
Switching Time Test Circuit
Ic Monitor R Vin Monitor Vin 10%
Waveform
90%
90% Rg D.U.T. VCC Ic Vin = 10 V td(on) ton 10% tr
90%
10 % td(off) toff tf
REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Page 5 of 7
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Package Dimensions
Package Name LDPAK(L) JEITA Package Code RENESAS Code PRSS0004AE-A Previous Code LDPAK(L) / LDPAK(L)V MASS[Typ.] 1.40g
Unit: mm
(1.4)
4.44 0.2 10.2 0.3 1.3 0.15
11.3 0.5 0.3 10.0 + 0.5 -
8.6 0.3
1.3 0.2 1.37 0.2
0.76 0.1 2.54 0.5 2.54 0.5
11.0 0.5
0.2 0.86 + 0.1 -
2.49 0.2
0.4 0.1
Package Name LDPAK(S)-(1)
JEITA Package Code SC-83
RENESAS Code PRSS0004AE-B
Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Page 6 of 7
1.7
1.3 0.15
7.8 6.6
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Ordering Information
Part Name GN4014ZB4LD GN4014ZB4LS GN4014ZB4LM Quantity 50 pcs. 1000 pcs. 1000 pcs. Sack Taping Taping Shipping Container
REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Page 7 of 7
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